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BFT66S NPN Transistor

The BFT66S is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFT66S transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFT66S transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFT66S transistor as follows.

Circuit diagram symbol of the BFT66S transistor

BFT66S Transistor Specification

Transistor Code BFT66S
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO72
Collector Power Dissipation (Maximum) PC 0.26W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 10V
Collector Current (Maximum) IC 0.03A
Operating Junction Temperature (Maximum) TJ 180°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 2000MHz
Collector Capacitance CC 1.2pF

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