BFT66E NPN Transistor

The BFT66E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFT66E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFT66E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFT66E transistor as follows.

BFT66E Transistor Specification

Transistor Code		BFT66E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO72
Collector Power Dissipation (Maximum)	PC	0.26W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	10V
Collector Current (Maximum)	IC	0.03A
Operating Junction Temperature (Maximum)	TJ	180°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	2000MHz
Collector Capacitance	CC	1.2pF

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