BFS16E PNP Transistor

The BFS16E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BFS16E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFS16E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BFS16E transistor as follows.

BFS16E Transistor Specification

Transistor Code		BFS16E
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		U21
Collector Power Dissipation (Maximum)	PC	0.06W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	210MHz
Collector Capacitance	CC	4pF

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