BFS13E NPN Transistor

The BFS13E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFS13E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFS13E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFS13E transistor as follows.

BFS13E Transistor Specification

Transistor Code		BFS13E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		U21
Collector Power Dissipation (Maximum)	PC	0.06W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		1000
Transition Frequency	FT	90MHz
Collector Capacitance	CC	7pF

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