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BFG590W NPN Transistor

The BFG590W is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFG590W transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFG590W transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFG590W transistor as follows.

Circuit diagram symbol of the BFG590W transistor

BFG590W Transistor Specification

Transistor Code BFG590W
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT343N
Transistor SMD Code T1
Collector Power Dissipation (Maximum) PC 0.5W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 0.2A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 5000MHz

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More Transistors Datasheets in SOT343N Package

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