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BFG520W NPN Transistor

The BFG520W is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFG520W transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFG520W transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFG520W transistor as follows.

Circuit diagram symbol of the BFG520W transistor

BFG520W Transistor Specification

Transistor Code BFG520W
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT343N
Transistor SMD Code N3
Collector Power Dissipation (Maximum) PC 0.5W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 0.07A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 2.5V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 9000MHz

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More Transistors Datasheets in SOT343N Package

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