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BFG425W NPN Transistor

The BFG425W is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFG425W transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFG425W transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFG425W transistor as follows.

Circuit diagram symbol of the BFG425W transistor

BFG425W Transistor Specification

Transistor Code BFG425W
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT343R
Collector Power Dissipation (Maximum) PC 0.135W
Collector-Base Voltage (Maximum) VCB 10V
Collector-Emitter Voltage (Maximum) VCE 4.5V
Collector Current (Maximum) IC 0.03A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 1V
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 25000MHz
Collector Capacitance CC 0.3pF

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More Transistors Datasheets in SOT343R Package

BFG21W BFG21W NPN Transistor BFG403W BFG403W NPN Transistor BFG480W BFG480W NPN Transistor