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BFG410W NPN Transistor

The BFG410W is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFG410W transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFG410W transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFG410W transistor as follows.

Circuit diagram symbol of the BFG410W transistor

BFG410W Transistor Specification

Transistor Code BFG410W
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package CMPAK
Collector Power Dissipation (Maximum) PC 0.054W
Collector-Base Voltage (Maximum) VCB 10V
Collector-Emitter Voltage (Maximum) VCE 4.5V
Collector Current (Maximum) IC 0.012A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 1V
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 22000MHz

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