BFG35 NPN Transistor

The BFG35 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFG35 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFG35 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFG35 transistor as follows.

BFG35 Transistor Specification

Transistor Code		BFG35
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO251
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	18V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	4000MHz

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