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BFG325W NPN Transistor

The BFG325W is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFG325W transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFG325W transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFG325W transistor as follows.

Circuit diagram symbol of the BFG325W transistor

BFG325W Transistor Specification

Transistor Code BFG325W
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package CMPAK
Transistor SMD Code A8*
Collector Power Dissipation (Maximum) PC 0.21W
Collector-Base Voltage (Maximum) VCB 15V
Collector-Emitter Voltage (Maximum) VCE 6V
Collector Current (Maximum) IC 0.035A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 2V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 14000MHz

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