BFG325W NPN Transistor

The BFG325W is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFG325W transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFG325W transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFG325W transistor as follows.

BFG325W Transistor Specification

Transistor Code		BFG325W
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		CMPAK
Transistor SMD Code		A8*
Collector Power Dissipation (Maximum)	PC	0.21W
Collector-Base Voltage (Maximum)	VCB	15V
Collector-Emitter Voltage (Maximum)	VCE	6V
Collector Current (Maximum)	IC	0.035A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	2V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	14000MHz

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