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BFG11-X NPN Transistor

The BFG11-X is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFG11-X transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFG11-X transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFG11-X transistor as follows.

Circuit diagram symbol of the BFG11-X transistor

BFG11-X Transistor Specification

Transistor Code BFG11-X
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT143
Collector Power Dissipation (Maximum) PC 0.4W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 8V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 2.5V
Forward Current Transfer Ratio (hFE Value) 25
Collector Capacitance CC 4pF

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