BFG11-X NPN Transistor

The BFG11-X is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFG11-X transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFG11-X transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFG11-X transistor as follows.

BFG11-X Transistor Specification

Transistor Code		BFG11-X
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT143
Collector Power Dissipation (Maximum)	PC	0.4W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	8V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	2.5V
Forward Current Transfer Ratio (hFE Value)		25
Collector Capacitance	CC	4pF

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