BFG10X NPN Transistor

The BFG10X is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFG10X transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFG10X transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFG10X transistor as follows.

BFG10X Transistor Specification

Transistor Code		BFG10X
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT143
Transistor SMD Code		*MT_N71
Collector Power Dissipation (Maximum)	PC	0.4W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	8V
Collector Current (Maximum)	IC	0.25A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	2.5V
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	1900MHz
Collector Capacitance	CC	3pF

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