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BFG10WX NPN Transistor

The BFG10WX is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFG10WX transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFG10WX transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFG10WX transistor as follows.

Circuit diagram symbol of the BFG10WX transistor

BFG10WX Transistor Specification

Transistor Code BFG10WX
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT343N
Transistor SMD Code T5
Collector Power Dissipation (Maximum) PC 0.4W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 10V
Collector Current (Maximum) IC 0.25A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 2.5V
Forward Current Transfer Ratio (hFE Value) 25
Transition Frequency FT 1900MHz
Collector Capacitance CC 3pF

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More Transistors Datasheets in SOT343N Package

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