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BFG10W NPN Transistor

The BFG10W is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFG10W transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFG10W transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFG10W transistor as follows.

Circuit diagram symbol of the BFG10W transistor

BFG10W Transistor Specification

Transistor Code BFG10W
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SO4
Collector Power Dissipation (Maximum) PC 0.4W
Collector-Emitter Voltage (Maximum) VCE 10V
Collector Current (Maximum) IC 0.25A
Forward Current Transfer Ratio (hFE Value) 25
Transition Frequency FT 2000MHz

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