BFG10 NPN Transistor

The BFG10 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BFG10 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BFG10 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BFG10 transistor as follows.

BFG10 Transistor Specification

Transistor Code		BFG10
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT143
Transistor SMD Code		N70
Collector Power Dissipation (Maximum)	PC	0.4W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	8V
Collector Current (Maximum)	IC	0.25A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	2.5V
Forward Current Transfer Ratio (hFE Value)		25
Collector Capacitance	CC	3pF

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