BF857EA NPN Transistor

The BF857EA is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BF857EA transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BF857EA transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BF857EA transistor as follows.

BF857EA Transistor Specification

Transistor Code		BF857EA
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO251
Collector Power Dissipation (Maximum)	PC	1.8W
Collector-Base Voltage (Maximum)	VCB	160V
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	90MHz
Collector Capacitance	CC	4.2pF

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