BF257G NPN Transistor

The BF257G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BF257G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BF257G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BF257G transistor as follows.

BF257G Transistor Specification

Transistor Code		BF257G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO39
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	170V
Collector-Emitter Voltage (Maximum)	VCE	170V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	55MHz
Collector Capacitance	CC	7pF

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