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BDY81B NPN Transistor

The BDY81B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDY81B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDY81B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDY81B transistor as follows.

Circuit diagram symbol of the BDY81B transistor

BDY81B Transistor Specification

Transistor Code BDY81B
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220
Collector Power Dissipation (Maximum) PC 36W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 10V
Forward Current Transfer Ratio (hFE Value) 70
Transition Frequency FT 0.8MHz
Collector Capacitance CC 500pF

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