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BDY80 NPN Transistor

The BDY80 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDY80 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDY80 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDY80 transistor as follows.

Circuit diagram symbol of the BDY80 transistor

BDY80 Transistor Specification

Transistor Code BDY80
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220
Collector Power Dissipation (Maximum) PC 36W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 35V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 10V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 0.8MHz
Collector Capacitance CC 500pF

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