BDY76E NPN Transistor

The BDY76E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDY76E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDY76E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDY76E transistor as follows.

BDY76E Transistor Specification

Transistor Code		BDY76E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO204
Collector Power Dissipation (Maximum)	PC	150W
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	20A
Forward Current Transfer Ratio (hFE Value)		40

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