BDY26B NPN Transistor

The BDY26B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDY26B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDY26B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDY26B transistor as follows.

BDY26B Transistor Specification

Transistor Code		BDY26B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	87W
Collector-Base Voltage (Maximum)	VCB	300V
Collector-Emitter Voltage (Maximum)	VCE	180V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	10MHz

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