BDX63B NPN Transistor

The BDX63B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDX63B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDX63B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDX63B transistor as follows.

BDX63B Transistor Specification

Transistor Code		BDX63B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	90W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		2000
Transition Frequency	FT	1MHz

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