BDX10H NPN Transistor

The BDX10H is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDX10H transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDX10H transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDX10H transistor as follows.

BDX10H Transistor Specification

Transistor Code		BDX10H
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	117W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	90V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	0.8MHz

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