BDW25-10 NPN Transistor

The BDW25-10 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDW25-10 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDW25-10 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDW25-10 transistor as follows.

BDW25-10 Transistor Specification

Transistor Code		BDW25-10
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	26W
Collector-Base Voltage (Maximum)	VCB	130V
Collector-Emitter Voltage (Maximum)	VCE	130V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		63
Transition Frequency	FT	50MHz

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