BDW12 NPN Transistor

The BDW12 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDW12 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDW12 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDW12 transistor as follows.

BDW12 Transistor Specification

Transistor Code		BDW12
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	180W
Collector-Base Voltage (Maximum)	VCB	160V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	200°C
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	1MHz

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