BDV67D NPN Transistor

The BDV67D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDV67D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDV67D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDV67D transistor as follows.

BDV67D Transistor Specification

Transistor Code		BDV67D
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TOP3
Collector Power Dissipation (Maximum)	PC	200W
Collector-Base Voltage (Maximum)	VCB	160V
Collector-Emitter Voltage (Maximum)	VCE	140V
Collector Current (Maximum)	IC	16A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		2000

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