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BDV67B NPN Transistor

The BDV67B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDV67B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDV67B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDV67B transistor as follows.

Circuit diagram symbol of the BDV67B transistor

BDV67B Transistor Specification

Transistor Code BDV67B
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TOP3
Collector Power Dissipation (Maximum) PC 200W
Collector-Base Voltage (Maximum) VCB 120V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 16A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 2000

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