BDV66B PNP Transistor

The BDV66B is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BDV66B transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDV66B transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BDV66B transistor as follows.

BDV66B Transistor Specification

Transistor Code		BDV66B
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TOP3
Collector Power Dissipation (Maximum)	PC	200W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	16A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		2000

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