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BDV13 NPN Transistor

The BDV13 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDV13 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDV13 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDV13 transistor as follows.

Circuit diagram symbol of the BDV13 transistor

BDV13 Transistor Specification

Transistor Code BDV13
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220
Collector Power Dissipation (Maximum) PC 36W
Collector-Base Voltage (Maximum) VCB 45V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 175°C
Forward Current Transfer Ratio (hFE Value) 750
Transition Frequency FT 3MHz

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