BDV12 NPN Transistor

The BDV12 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDV12 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDV12 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDV12 transistor as follows.

BDV12 Transistor Specification

Transistor Code		BDV12
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	26W
Collector-Base Voltage (Maximum)	VCB	120V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		75
Transition Frequency	FT	30MHz

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