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BDV10 NPN Transistor

The BDV10 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDV10 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDV10 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDV10 transistor as follows.

Circuit diagram symbol of the BDV10 transistor

BDV10 Transistor Specification

Transistor Code BDV10
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220
Collector Power Dissipation (Maximum) PC 26W
Collector-Base Voltage (Maximum) VCB 120V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 175°C
Forward Current Transfer Ratio (hFE Value) 25
Transition Frequency FT 30MHz

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