BDT64B PNP Transistor

The BDT64B is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BDT64B transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDT64B transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BDT64B transistor as follows.

BDT64B Transistor Specification

Transistor Code		BDT64B
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	125W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		2000
Transition Frequency	FT	20MHz

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