BDT64AF PNP Transistor

The BDT64AF is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BDT64AF transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDT64AF transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BDT64AF transistor as follows.

BDT64AF Transistor Specification

Transistor Code		BDT64AF
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		ISO220
Collector Power Dissipation (Maximum)	PC	22W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		2000
Transition Frequency	FT	20MHz

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