BDS29B NPN Transistor

The BDS29B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDS29B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDS29B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDS29B transistor as follows.

BDS29B Transistor Specification

Transistor Code		BDS29B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		ISO218
Collector Power Dissipation (Maximum)	PC	150W
Collector-Emitter Voltage (Maximum)	VCE	90V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)	TJ	200°C
Forward Current Transfer Ratio (hFE Value)		2000
Transition Frequency	FT	4MHz

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