BDS16XSMD NPN Transistor

The BDS16XSMD is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDS16XSMD transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDS16XSMD transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDS16XSMD transistor as follows.

BDS16XSMD Transistor Specification

Transistor Code		BDS16XSMD
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO276AB
Collector Power Dissipation (Maximum)	PC	43.75W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	30MHz

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