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BDS16SMD05 NPN Transistor

The BDS16SMD05 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDS16SMD05 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDS16SMD05 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDS16SMD05 transistor as follows.

Circuit diagram symbol of the BDS16SMD05 transistor

BDS16SMD05 Transistor Specification

Transistor Code BDS16SMD05
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO276AA
Collector Power Dissipation (Maximum) PC 43.75W
Collector-Base Voltage (Maximum) VCB 120V
Collector-Emitter Voltage (Maximum) VCE 120V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 30MHz

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