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BDS14SMD05 PNP Transistor

The BDS14SMD05 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BDS14SMD05 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDS14SMD05 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BDS14SMD05 transistor as follows.

Circuit diagram symbol of the BDS14SMD05 transistor

BDS14SMD05 Transistor Specification

Transistor Code BDS14SMD05
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO276AA
Collector Power Dissipation (Maximum) PC 43.75W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 3MHz

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