BDS12N1A NPN Transistor

The BDS12N1A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDS12N1A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDS12N1A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDS12N1A transistor as follows.

BDS12N1A Transistor Specification

Transistor Code		BDS12N1A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO276AA
Collector Power Dissipation (Maximum)	PC	43.75W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	3MHz

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