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BDS12IG NPN Transistor

The BDS12IG is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDS12IG transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDS12IG transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDS12IG transistor as follows.

Circuit diagram symbol of the BDS12IG transistor

BDS12IG Transistor Specification

Transistor Code BDS12IG
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO257AA
Collector Power Dissipation (Maximum) PC 90W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 3MHz

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More Transistors Datasheets in TO257AA Package

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