BDS12 NPN Transistor

The BDS12 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDS12 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDS12 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDS12 transistor as follows.

BDS12 Transistor Specification

Transistor Code		BDS12
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	90W
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	200°C
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	3MHz

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