The BDS11IG is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDS11IG transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The BDS11IG transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the BDS11IG transistor as follows.
| Transistor Code | BDS11IG | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Silicon(SI) | |
| Package | TO254AA SOT227 | |
| Collector Power Dissipation (Maximum) | PC | 90W |
| Collector-Base Voltage (Maximum) | VCB | 80V |
| Collector-Emitter Voltage (Maximum) | VCE | 80V |
| Collector Current (Maximum) | IC | 15A |
| Operating Junction Temperature (Maximum) | TJ | 200°C |
| Emitter-Base Voltage (Maximum) | VEB | 5V |
| Forward Current Transfer Ratio (hFE Value) | 40 | |
| Transition Frequency | FT | 3MHz |
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