BDS10N1B NPN Transistor

The BDS10N1B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BDS10N1B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BDS10N1B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BDS10N1B transistor as follows.

BDS10N1B Transistor Specification

Transistor Code		BDS10N1B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO276AA
Collector Power Dissipation (Maximum)	PC	43.75W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	3MHz

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