BD825B NPN Transistor

The BD825B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BD825B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BD825B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BD825B transistor as follows.

BD825B Transistor Specification

Transistor Code		BD825B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO202
Collector Power Dissipation (Maximum)	PC	8W
Collector-Base Voltage (Maximum)	VCB	45V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	125MHz

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