BD751B NPN Transistor

The BD751B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BD751B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BD751B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BD751B transistor as follows.

BD751B Transistor Specification

Transistor Code		BD751B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	250W
Collector-Base Voltage (Maximum)	VCB	110V
Collector-Emitter Voltage (Maximum)	VCE	140V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		25
Transition Frequency	FT	4MHz

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