BD676H PNP Transistor

The BD676H is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BD676H transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BD676H transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BD676H transistor as follows.

BD676H Transistor Specification

Transistor Code		BD676H
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		ISO126
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	45V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		750
Transition Frequency	FT	1MHz

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