BD306B NPN Transistor

The BD306B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BD306B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BD306B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BD306B transistor as follows.

BD306B Transistor Specification

Transistor Code		BD306B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO126
Collector Power Dissipation (Maximum)	PC	10W
Collector-Base Voltage (Maximum)	VCB	36V
Collector-Emitter Voltage (Maximum)	VCE	36V
Collector Current (Maximum)	IC	2.5A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	50MHz

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