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BD246E PNP Transistor

The BD246E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BD246E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BD246E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BD246E transistor as follows.

Circuit diagram symbol of the BD246E transistor

BD246E Transistor Specification

Transistor Code BD246E
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO218
Collector Power Dissipation (Maximum) PC 80W
Collector-Base Voltage (Maximum) VCB 180V
Collector-Emitter Voltage (Maximum) VCE 140V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 3MHz

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