BD246E PNP Transistor

The BD246E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BD246E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BD246E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BD246E transistor as follows.

BD246E Transistor Specification

Transistor Code		BD246E
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO218
Collector Power Dissipation (Maximum)	PC	80W
Collector-Base Voltage (Maximum)	VCB	180V
Collector-Emitter Voltage (Maximum)	VCE	140V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		15
Transition Frequency	FT	3MHz

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