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BD233G NPN Transistor

The BD233G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BD233G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BD233G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BD233G transistor as follows.

Circuit diagram symbol of the BD233G transistor

BD233G Transistor Specification

Transistor Code BD233G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO126
Collector Power Dissipation (Maximum) PC 30W
Collector-Base Voltage (Maximum) VCB 45V
Collector-Emitter Voltage (Maximum) VCE 45V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 50MHz

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