BD159G NPN Transistor

The BD159G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BD159G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BD159G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BD159G transistor as follows.

BD159G Transistor Specification

Transistor Code		BD159G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO225
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	375V
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	15MHz
Collector Capacitance	CC	10pF

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