BD115 NPN Transistor

The BD115 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the BD115 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BD115 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the BD115 transistor as follows.

BD115 Transistor Specification

Transistor Code		BD115
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO39
Collector Power Dissipation (Maximum)	PC	6W
Collector-Base Voltage (Maximum)	VCB	245V
Collector-Emitter Voltage (Maximum)	VCE	180V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	200°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		22
Transition Frequency	FT	80MHz

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